Analysis

Inspection Environment

Please feel free to contact us with any semiconductor analysis request regarding the following: Non-destructive external appearance/X-ray fluoroscopic observation, SAT observation, Electrical operation check, ESD destruction analysis, Observation of gaps in chip sealant resin, EMS/OBIRCH abnormality search, Package(PKG) analysis, Cross section/surface/parallel grinding observation (ball or bump observation), Observation of Defective Peeling off area, Foreign object analysis by EDX/FT-IR, etc.
We offer a wide range of analytical services.


◆Description of Semiconductor Analysis Services (Quality Analysis/Failure Analysis)

■■<Type of Analysis> ■■<Typically Observed Items>
■■FIB process ■■Circuit modification by FIB ・LSI interconnection process for analysis
■■External appearance observation ■■Attached foreign object and crack
■■X-ray fluoroscopy observation (X-ray test)  ■■Inner lead and condition of wire
■■Electric characteristic observation ■■Checking operation of diodicity, resistance and IC unit.
■■Ultrasonic observation ■■Peeling, void and crack
■■Decap Observation ■■Type of wire, destruction, authenticity assessment、unsealing Cu Wire
■■Component analysis ■■Metal foreign matter
■■Cross section/surface grinding observation ■■Bump bonding condition, circuit board wiring, ion milling process 
■■Chip structural analysis ■■Observation of each layer
■■EMS and OBIRCH analysis ■■To detect leak and short and high resistant parts inside a chip
■■Reproduction of solder ball ■■BGA Reball
■■Repackage ■■Multilayer chip/Extracting chip from BGA, etc.→Repackage   
■■Strength test ■■Tensile strength/ Shear strength measurement

Above is only an example of the types of analysis that we can perform.
Our experienced and professional engineers will assist with all requests from customers, including but not limited to, failure of electronic devices(semiconductor related) analysis, inspection of failure, and analysis support. Please feel free to contact us about anything regarding an analysis contract. We offer low-cost, but high-quality analysis technologies.


FIB (Focused Ion Beam) Processing Service

In addition to our office in Kitsuki City in Oita Prefecture, we opened a new analysis center in Yokohama City, Kanagawa Prefecture as well as another one inKariya City, Aichi Prefecture. These offices provide various services from circuit modification by FIB, to LSI wiring analysis and Decapping.


◆FIB summary

□ Accurate circuit modulation using CAD (GDS II compatible)
□ PAD machining for probe points to investigate internal characteristics
□ We are able to handle in-house the unsealing of packaging of a requested sample. (Possess unsealing facility)
□ Chip level processing, prototyping and assembling can be consistently handled within the company (possession of prototype line)
□ The CAD conversion processing system is a private system independent of our company and is highly confidential
□ The FIB room is a completely private room and customer attendance is possible.
□ Continuous operation is possible using our own analysis equipment(OBIRCH/Manual prober)
 ※We may ask you to provide GDS files.

Using Device
Name of device Manufacturer Model Number Number of units Device outline
FIB device
Focused on ion beam
DCG Systems Inc. P3X 2 Process in Wafer condition, 40nm wiring process
CAD conversion system DCG Systems Inc. OptiFIB-IV 1 Circuit modulation from the backside, accuracy improvement of insulation film, Improvement of wiring resistance

Process example
PAD
PAD
Milling
ミリング
Wiring short
配線ショート

To the top of the page


External Observation

Using various microscopes / SEM, observe package cracks, observe adhered foreign matter, measure each part, observe Chip surface after opening, etc., and analyze the semiconductor.


◆Observation Items

Various Microscopes and SEM Observation
Package crack / observation of attached foreign matter / length measurement of each part / observation of whiskers

Using Device

Name of device Manufacturer Model Number Number of units Device outline
Optical microscope NIKON ECLIPSE L200 1 Highest magnification ×1000
Optical microscope NIKON AZ100 1 Highest magnification ×500
Optical microscope OLYMPUS BX-51M 1 Highest magnification ×500
Stereo microscope OLYMPUS SZX9 1 Highest magnification ×285
Measuring microscope OLYMPUS STM-MJS 1 X-Y-Z Minimum of 0.5um
Microscope KEYENCE VHX-700F 1 Highest magnification ×5000
SEM(Scanning electron microscope) JEOL SEM JSM-7100F 1 Resolution  1.2nm(30kV)
3.0nm(1kV)
SEM(Scanning electron microscope) HITACHI SEM S4000 1 Resolution 3.5nm
Analysis Example
CHIP resistance contamination(SEM observation)
CHIP抵抗異物混入
Enlarged area inside red frame of left diagram.
赤枠内拡大
Package side crack
クラック
CSP side crack
クラック

To the top of the page


X-ray Fluoroscopic Observation

For wire shape observations, etc. analysis of the semiconductor will be done by non-destructive x-ray fluoroscopy for viewing the inside of the part. Because of the arm type mounting, it is possible to observe the item from multiple directions.


◆Observation Item

Inner lead Type / Au, Cu wire bonding condition / Observation of foreign matter in PKG etc.

Using Device

Name of device Manufacturer Model Number Number of units Device outline
X-ray Inspection Apparatus TOSHIBA TOSMICRON-CH4090FD 1 Focal spot size: 1μm
X-ray Inspection Apparatus TOSHIBA TOSMICRON-S4090IN 1 Resolution :5μm
X-ray Inspection Apparatus Nordson・Advanced・Technology XD7500VR (Jade FP)  1 Resolution:0.95μm
Analysis Example
Lead Frame Observation
リードフレーム観察
Wire Form Observation
Wire形状確認
Slope check1
傾斜確認1
Slope check 2
傾斜確認2

To the top of the page


Electrical Characteristic Observation

Analyze semiconductors by inspecting the diode characteristics of each pin, Open/ Short Characteristics inspection, Measure the offset voltage and check the operation of the sample, and perform electrical characteristic inspection.


◆Observation item

Observation of diode characteristics of each pin / Observation of OPEN ・ SHORT characteristics between pins / AC characteristics check / Offset voltage check / Temperature characteristic evaluation etc.


Using Device

Analysis Example

Measuring Circuit
測定回路
Wave Form of Measurement Results
測定結果波形

To the top of the page


Ultrasonic Flaw Detection with SAT (Scanning Acoustic Tomograph)

A non-destructive semiconductor analysis that uses ultrasonic testing equipment (SAT) to observe peeling in the package, detection of voids, etc. using ultrasonic waves.


◆Observation item

SAT can find Peeling within package / Chip Crack / Poor Adhesion / Void detection, etc.

Using Device

Name of device Manufacturer Model Number Number of units Device outline
Scanning Acoustic Tomograph
SAT
Hitachi Construction Machinery mi-scope hyper 1 Reflection Method:25MHz・50MHz
Transmission Method:25MHz

Analysis Example
  
Before Stress
ストレス前
→ After Heat Stress (Peeling Occurs)
熱ストレス後
Reflection method
(peeling between CHIP-MOLD resin)
反射法

⇔
Transmission method
(peeling between CHIP-MOLD resin)
透過法

To the top of the page


Decapping Observation(Decap)

We will inform customers about the decapping analysis of semiconductor packaging and other semiconductor related products. We will perform analysis by removing the resin, observing the inside (Chip ・ Wire etc.), and analyzing the semiconductor. Decap Analysis can also be performed on Cu Wire (copper wire) bonding products.


◆Observation Item

Decap using acid-based chemicals, organic chemicals, etc. → Chip observation / wire shape observation etc.

Using Device
Name of device Manufacturer Model Number Number of units Device outline
Acid-based Draft Wet Scrubber AS ONE ADP-1800SC 1 Scrubber only for acid-based chemicals
Acid-based Draft Wet Scrubber AS ONE< AHSP-1500SC 2 Scrubber only for acid-based chemicals
Organic Draft Dry Scrubber AS ONE CD-900SW 1 Scrubber only for organic chemicals
Laser decamp machine Panasonic LP-V series 1 Fiber laser λ=1.06μm class4 laser product

※ For observation we will use the equipment introduced in" Exterior observation "
※ In addition, We are able to remove substrate/solder resist from flexible cables.


Analysis Example

          Example of decapping Cu Wire item

           Denken also performs analysis of Cu Wire products.

Decap condition
開封状態
1st Bond exposure
1st Bond露出
2nd Bond exposure
2nd Bond露出
1st/2nd Bond exposure
1st/2nd Bond露出


         Other Decapping Examples

 
Destruction marks
破壊痕
Scratches on microlens
(observed with a Metallurgical microscope)
マイクロレンズ上の傷1
Scratch on microlens
(SEM Observation/ Red arrow section in the picture to the left)
マイクロレンズ上の傷2

To the top of the page


Component Analysis

EDS and FT-IR are used to analyze metallic and organic foreign matter in semiconductors. We also investigate micro-level defects of a specified area.


◆Observation Item

Analysis of metallic foreign matter, organic foreign matter, etc


Using Device
Name of device Manufacturer Model Number Number of units Device outline
EDS JEOL STANDARD 1 Analyze element of Be~U
(Fixed quantity, qualitative , mapping analysis)

Analysis Example

                   EDS Analysis    


Solder ball component analysis (containing PB)
成分分析(PB含有)
Solder ball component analysis(PB-Free)
成分分析(PB-Free)

To the top of the page


Section・ Planar ・ Parallel Plishing Observation

In order to observe the cross section of a specified defected area of semiconductor, we will perform grinding from cross section and surface using a saw and grinding machine. We then observe and analyze the condition of defected area. It's also possible to perform a Ion milling process.


◆Observation Item

Bonding condition of bump(cross-section)/wiring observation of each layer of substrate(surface) by using grinding/cross-section


Using Device
Name of device Manufacturer Model Number Number of units Device outline
Saw Buhler ISOMET1000 1 Device for cutting samples to adequate size
Grinding Machine Buhler METASERV2000 1 Rotational speed50~500rpm
Grinding Machine Marumoto Struers Tegrapol-25 2 Rotational speed40~600rpm (possess 2 units)
Grinding Machine Buhler EcoMet250 2 Rotational speed10~500rpm 、increase and decrease by 10rpm
Automatic Grinding Machine Buhler AutoMet250 1 Rotational speed30~60rpm、increase and decrease by 10rpm
Ion Milling Device HITACHI ION MILLING SYSTEM IM4000 1 Removes small scratches and strains that are difficult to remove with mechanical grinding.
Wire Saw Well Precision Diamond Wiresaw 3242 1 Generates a smooth and sharp surface on the materials.
Band Saw Yskokil DC-350 1 The saw is only for ceramics, glass, or hard carbon.

※For observation, we will use the device introduced in “External Observation”


Analysis Example

Cross-sectional Grinding Observation
Metallic Microscope (Chip on Chip) 40 μm pitch Bump connection observation
金属顕微鏡
     Detailed analysis by SEM observation(Chip on Chip)
SEM観察1 SEM観察2


CHIP Structural Analysis

We will perform structural analysis by observing each layer of semiconductor with chemical liquid / gas / and CHIP grinding machines.


◆Observation Item

Observation of each layer by wet/dry etching or Chip grinding machine(SEM Observation


Using Device

Name of device Manufacturer Model Number Number of units Device outline
Dry Etcher NSC ES371 1 Able to correspond to multilayer wiring Anisotropic etching is possible
Small Automatic Grinding Machine Buhler MINIMET1000 1 Rough Grinding ~ Final Finish Grinding

※For observation, we will use the device introduced in “External Observation”

Analysis Example
Observation of protection circuit defect (POLY Layer)
SEM
回路破壊

Enlarged area from left diagram inside the red frame.
回路破壊拡大

To the top of the page


EMS・OBIRCH analysis(Emission analysis・Thermal analysis)

Observation of abnormal current that occurred from a small leak or malfunction from the surface or backside of a semiconductor CHIP. Perform analysis by applying weak emission/thermal to the part to narrow down the defective area.


◆Observation Item

Using the EMS- Emission microscope (with OBIRCH function), we can identify the defective areas inside the semiconductor chip (LEAK, Short, High resistivity, etc.).


Using Device
Name of device Manufacturer Model Number Number of units Device outline
Emission Microscope
(with OBIRCH function)
Hamamatsu Photonics PHEMOS1000 1 Measurement Magnification:x5,x20,x50,x100

Analysis Example

OBIRCH Observation image of ESD destruction
Observation of overall CHIP (x5)
裏面OBIRCH観察

Expanded image of the red framed area from the left diagram (x100)
裏面OBIRCH観察拡大
     OBIRCH Observation image of ESD destruction
Observation of overall CHIP (x5)
表面OBIRCH観察

Expanded image of the red framed area from the left diagram (x100)
表面OBIRCH観察拡大

To the top of the page


Solder Ball Reproduction (BGA Re-Ball)

For BGA products removed from the mounting substrate, etc., we will conduct ball reproduction (re-balling) work on the semiconductor sample in order for the function test to be performed.


◆Operation Item

For BGA products removed from the mounting substrate, etc., we will conduct ball reproduction (re-balling) work on the semiconductor sample in order for the function test to be performed.
※Whole BGA from Φ0.25 is possible. (Pb-Free/Pb available)


Flow

Arrival of requested product
依頼品入荷
Cleaning
クリーニング
Ball mounted/reproduced
ボール搭載/再
Shipment
出荷

To the top of the page


Repackage

Extract the semiconductor needing analysis from the its package and assemble it into another package.(Repackage / re-packaging)

  

◆Operation Item

Extract the semiconductors needing analysis from the multi-chip installed package and assemble them into a different package. (Able to select the package corresponding with the desired test environment).

※Please refer to this lineup for available package installation.


Flow

repackageの流れ

To the top of the page


Strength Test

We handle wire-pulling test, ball-shearing test, and die-shearing test. We can accept orders for even just 1 sample. It is also possible for the customer to be present during the testing.
Please contact us for more details.


       
Test Name Content Compatible Standard
Wire pull test Measures the tensile strength of the bonding wire SEMI-G73-0997 / MIL-STD-883 / IEC-60749-22 / JEITA-ED-4703
Ball Shear
(Wire Bond Shear) Test
Measures the shear strength between the wire and the pad. ASTMF1269 / JESD22-B116 / MIL-STD-883 / IEC-60749-22 /
JEITA-ED-4703 / AEC-Q100-010
Die Shear TestMeasures shear strength of die(chip). MIL-STD-883 / IEC-60749-19 / JEITA-ED-4703
Solder Ball Shear TestMeasures the shear strength between the solder ball and the ball pad. MIL-STD-883 / JEITA-ED-4703

To the top of the page

Please contact us by mail or telephone for more details.


TEL:(0978)63-8856