DENKEN

ELECTRONICS

Cross-section FIB analysis

Nano-order observation can be possible by using FIB.

Cross section processing observation

Designated place observation is available by ion beam precious processing.

Cross section processing observation

Sample preparation for transmissive electron microscope

25um level micro sample extraction from a sample is possible by using the micro sampling method. Transmissive observation is available with a transmissive electron microscope when designated place thickness is about 100nm.

Cross section processing observation

CMOS structure observation

Cross section processing observation

『Dual Beam FIB』that enables electron beam FIB processing along with observation is available. This equipment is the one that can observe FIB processed cross-section just with the SEM and can re-construct several hundred SEM images captured on and off repeated processing and observation, resulting in 3D structure analysis.

Part numberFB-2100NX-5000Centrios
MakerHitachiHitachiFEI
Acceleration voltage10~40KV0.1~30KV0.5~30KV
Max current60nA100nA60nA
SIM resolution6nm4nm3.5nm
Sample size10x10mm155x155mm30x32mm
SEM (electron beam)××
SIM resolutionHitachiHitachiFEI
Ar/Xe ion beam0.7nm@15kV
TEM/STEM processing×
CAD Link××
Cross section processing observation
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